BSS84XHZGG2CR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 60V 230MA DFN1010-3W
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DFN1010-3W
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.07 EUR |
| 24+ | 0.76 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.40 EUR |
| 1000+ | 0.35 EUR |
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Technische Details BSS84XHZGG2CR Rohm Semiconductor
Description: MOSFET P-CH 60V 230MA DFN1010-3W, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: DFN1010-3W, Grade: Automotive, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote BSS84XHZGG2CR nach Preis ab 0.18 EUR bis 1.09 EUR
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| BSS84XHZGG2CR | Hersteller : Rohm Semiconductor |
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auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSS84XHZGG2CR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 60V 0.23A Automotive AEC-Q101 3-Pin DFN-W T/R |
auf Bestellung 7950 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSS84XHZGG2CR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 60V 0.23A Automotive AEC-Q101 3-Pin DFN-W T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84XHZGG2CR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 60V 230MA DFN1010-3W Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: DFN1010-3W Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V Qualification: AEC-Q101 |
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