BST91T1P4K01-VC ROHM
Hersteller: ROHM
Description: ROHM - BST91T1P4K01-VC - Siliziumkarbid-MOSFET, SixPack, Sechsfach n-Kanal, 90 A, 750 V, 0.019 ohm, HSDIP
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 90A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4.8V
MOSFET-Modul-Konfiguration: SixPack
Verlustleistung: 385W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: HSDIP
Anzahl der Pins: 20Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: Sechsfach n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.019ohm
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Technische Details BST91T1P4K01-VC ROHM
Description: ROHM - BST91T1P4K01-VC - Siliziumkarbid-MOSFET, SixPack, Sechsfach n-Kanal, 90 A, 750 V, 0.019 ohm, HSDIP, tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 750V, rohsCompliant: YES, Dauer-Drainstrom Id: 90A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4.8V, MOSFET-Modul-Konfiguration: SixPack, Verlustleistung: 385W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: HSDIP, Anzahl der Pins: 20Pin(s), Produktpalette: -, productTraceability: No, usEccn: EAR99, Kanaltyp: Sechsfach n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 18V, Drain-Source-Durchgangswiderstand: 0.019ohm.
Weitere Produktangebote BST91T1P4K01-VC
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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BST91T1P4K01-VC | Rohm Semiconductor |
Description: HSDIP20, 750V, 90A, 3-PHASE-BRID Packaging: Box Package / Case: 20-PowerDIP Module (1.508", 38.30mm) Mounting Type: Through Hole Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C Technology: Silicon Carbide (SiC) Power - Max: 385W (Tc) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Supplier Device Package: 20-HSDIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BST91T1P4K01-VC |
|
Hersteller: Rohm Semiconductor
Description: HSDIP20, 750V, 90A, 3-PHASE-BRID
Packaging: Box
Package / Case: 20-PowerDIP Module (1.508", 38.30mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V
Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: 20-HSDIP
Description: HSDIP20, 750V, 90A, 3-PHASE-BRID
Packaging: Box
Package / Case: 20-PowerDIP Module (1.508", 38.30mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V
Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: 20-HSDIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH