BSV236SPH6327XTSA1 Infineon Technologies

Description: MOSFET P-CH 20V 1.5A SOT363-6, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: PG-SOT363-PO, Vgs(th) (Max) @ Id: 1.2V @ 8µA, Power Dissipation (Max): 560mW (Ta), Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).