BSV52LT1G ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
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Produktbewertung abgeben
Technische Details BSV52LT1G ON Semiconductor
Description: TRANS NPN 12V 0.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V, Frequency - Transition: 400MHz, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 225 mW.
Weitere Produktangebote BSV52LT1G nach Preis ab 0.12 EUR bis 0.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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BSV52LT1G | onsemi |
 Description: TRANS NPN 12V 0.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 400MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 225 mW |
auf Bestellung 217 Stücke: Lieferzeit 10-14 Tag (e) |
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BSV52LT1G | onsemi |
Bipolar Transistors - BJT 100mA 12V Switching NPN |
auf Bestellung 9347 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSV52LT1G |
|
Hersteller: onsemi
Description: TRANS NPN 12V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 225 mW
Description: TRANS NPN 12V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 225 mW
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 0.58 EUR |
| 60+ | 0.35 EUR |
| 100+ | 0.21 EUR |
| BSV52LT1G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 100mA 12V Switching NPN
Bipolar Transistors - BJT 100mA 12V Switching NPN
auf Bestellung 9347 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.69 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.14 EUR |
| 6000+ | 0.12 EUR |