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BSZ009NE2LS5ATMA1

BSZ009NE2LS5ATMA1 Infineon Technologies

Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 39A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.75 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSZ009NE2LS5ATMA1 Infineon Technologies

Description: MOSFET N-CH 25V 39A/40A TSDSON, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TSDSON-8-FL, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 69W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote BSZ009NE2LS5ATMA1 nach Preis ab 1.46 EUR bis 4.17 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSZ009NE2LS5ATMA1 BSZ009NE2LS5ATMA1 Infineon Technologies Infineon_BSZ009NE2LS5_DataSheet_v02_01_EN.pdf MOSFETs IFX FET 15V-30V
auf Bestellung 3537 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.59 EUR
10+2.11 EUR
100+1.83 EUR
500+1.68 EUR
1000+1.56 EUR
2500+1.51 EUR
5000+1.46 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ009NE2LS5ATMA1 BSZ009NE2LS5ATMA1 Infineon Technologies Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e Description: MOSFET N-CH 25V 39A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
auf Bestellung 9540 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.17 EUR
10+3.77 EUR
25+3.36 EUR
100+3.03 EUR
250+2.69 EUR
500+2.35 EUR
1000+1.95 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ009NE2LS5ATMA1 Infineon_BSZ009NE2LS5_DataSheet_v02_01_EN.pdf
BSZ009NE2LS5ATMA1
Hersteller: Infineon Technologies
MOSFETs IFX FET 15V-30V
auf Bestellung 3537 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.59 EUR
10+2.11 EUR
100+1.83 EUR
500+1.68 EUR
1000+1.56 EUR
2500+1.51 EUR
5000+1.46 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ009NE2LS5ATMA1 Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e
BSZ009NE2LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 39A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
auf Bestellung 9540 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.17 EUR
10+3.77 EUR
25+3.36 EUR
100+3.03 EUR
250+2.69 EUR
500+2.35 EUR
1000+1.95 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH