Produkte > INFINEON TECHNOLOGIES > BSZ013NE2LS5IATMA1
BSZ013NE2LS5IATMA1

BSZ013NE2LS5IATMA1 Infineon Technologies

Infineon-BSZ013NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f6030a74c7cc5 Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.44 EUR
10000+ 1.39 EUR
Mindestbestellmenge: 5000
Produktrezensionen
Produktbewertung abgeben

Technische Details BSZ013NE2LS5IATMA1 Infineon Technologies

Description: MOSFET N-CH 25V 32A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V.

Weitere Produktangebote BSZ013NE2LS5IATMA1 nach Preis ab 1.44 EUR bis 3.33 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSZ013NE2LS5IATMA1 BSZ013NE2LS5IATMA1 Hersteller : Infineon Technologies Infineon_BSZ013NE2LS5I_DataSheet_v02_02_EN-3360855.pdf MOSFET TRENCH <= 40V
auf Bestellung 3734 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.46 EUR
10+ 2.22 EUR
100+ 1.95 EUR
500+ 1.8 EUR
1000+ 1.49 EUR
5000+ 1.44 EUR
Mindestbestellmenge: 2
BSZ013NE2LS5IATMA1 BSZ013NE2LS5IATMA1 Hersteller : Infineon Technologies Infineon-BSZ013NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f6030a74c7cc5 Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 41583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.33 EUR
10+ 2.76 EUR
100+ 2.2 EUR
500+ 1.86 EUR
1000+ 1.58 EUR
2000+ 1.5 EUR
Mindestbestellmenge: 6