BSZ014NE2LS5IFATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 25V 31A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 12 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 1.55 EUR |
| 10000+ | 1.5 EUR |
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Technische Details BSZ014NE2LS5IFATMA1 Infineon Technologies
Description: MOSFET N-CH 25V 31A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 2.1W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 12 V.
Weitere Produktangebote BSZ014NE2LS5IFATMA1 nach Preis ab 1.59 EUR bis 3.57 EUR
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BSZ014NE2LS5IFATMA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH <= 40V |
auf Bestellung 932 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ014NE2LS5IFATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 31A/40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 12 V |
auf Bestellung 47261 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSZ014NE2LS5IFATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Mounting: SMD On-state resistance: 1.45mΩ Gate-source voltage: ±16V Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 40A Kind of channel: enhanced Drain-source voltage: 25V Type of transistor: N-MOSFET Case: PG-TSDSON-8 Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| BSZ014NE2LS5IFATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Mounting: SMD On-state resistance: 1.45mΩ Gate-source voltage: ±16V Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 40A Kind of channel: enhanced Drain-source voltage: 25V Type of transistor: N-MOSFET Case: PG-TSDSON-8 |
Produkt ist nicht verfügbar |