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BSZ014NE2LS5IFATMA1

BSZ014NE2LS5IFATMA1 Infineon Technologies


Infineon-BSZ014NE2LS5IF-DS-v02_01-EN.pdf?fileId=5546d4624cb7f111014d000b50402513 Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 31A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 12 V
auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.17 EUR
Mindestbestellmenge: 5000
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Technische Details BSZ014NE2LS5IFATMA1 Infineon Technologies

Description: MOSFET N-CH 25V 31A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 2.1W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 12 V.

Weitere Produktangebote BSZ014NE2LS5IFATMA1 nach Preis ab 1.18 EUR bis 2.87 EUR

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BSZ014NE2LS5IFATMA1 BSZ014NE2LS5IFATMA1 Hersteller : Infineon Technologies Infineon-BSZ014NE2LS5IF-DS-v02_01-EN.pdf?fileId=5546d4624cb7f111014d000b50402513 Description: MOSFET N-CH 25V 31A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 12 V
auf Bestellung 26590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
10+1.97 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.21 EUR
2000+1.18 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BSZ014NE2LS5IFATMA1 BSZ014NE2LS5IFATMA1 Hersteller : Infineon Technologies Infineon_BSZ014NE2LS5IF_DataSheet_v02_03_EN-3361128.pdf MOSFETs TRENCH <= 40V
auf Bestellung 5469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.87 EUR
10+2.11 EUR
100+1.66 EUR
250+1.63 EUR
500+1.38 EUR
1000+1.29 EUR
10000+1.19 EUR
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BSZ014NE2LS5IFATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-BSZ014NE2LS5IF-DS-v02_01-EN.pdf?fileId=5546d4624cb7f111014d000b50402513 BSZ014NE2LS5IFATMA SMD N channel transistors
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