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BSZ017NE2LS5IATMA1

BSZ017NE2LS5IATMA1 Infineon Technologies


Infineon-BSZ017NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f64dff4bf6a99 Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 27A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.86 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSZ017NE2LS5IATMA1 Infineon Technologies

Description: MOSFET N-CH 25V 27A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V.

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BSZ017NE2LS5IATMA1 BSZ017NE2LS5IATMA1 Hersteller : Infineon Technologies Infineon_BSZ017NE2LS5I_DataSheet_v02_01_EN-3361071.pdf MOSFETs TRENCH <= 40V
auf Bestellung 4965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.15 EUR
10+1.63 EUR
25+1.55 EUR
100+1.26 EUR
500+1 EUR
1000+0.88 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BSZ017NE2LS5IATMA1 BSZ017NE2LS5IATMA1 Hersteller : Infineon Technologies Infineon-BSZ017NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f64dff4bf6a99 Description: MOSFET N-CH 25V 27A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 9200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+1.82 EUR
100+1.29 EUR
500+0.99 EUR
1000+0.91 EUR
2000+0.85 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BSZ017NE2LS5IATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-BSZ017NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f64dff4bf6a99 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhancement
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