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BSZ019N03LSATMA1

BSZ019N03LSATMA1 Infineon Technologies

BSZ019N03LS_Rev+2.1.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb7ddf173f4e
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A . 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta). 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1 EUR
10000+0.94 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSZ019N03LSATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 22A . 40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta). 40A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V.

Weitere Produktangebote BSZ019N03LSATMA1 nach Preis ab 0.8 EUR bis 3.78 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSZ019N03LSATMA1 BSZ019N03LSATMA1 Infineon Technologies Infineon_BSZ019N03LS_DataSheet_v02_04_EN.pdf MOSFETs N-Ch 30V 40A TDSON-8 OptiMOS
auf Bestellung 13572 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.38 EUR
10+0.99 EUR
100+0.84 EUR
500+0.81 EUR
5000+0.8 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ019N03LSATMA1 BSZ019N03LSATMA1 Infineon Technologies BSZ019N03LS_Rev+2.1.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb7ddf173f4e Description: MOSFET N-CH 30V 22A . 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta). 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 14145 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.78 EUR
10+2.41 EUR
100+1.63 EUR
500+1.3 EUR
1000+1.19 EUR
2000+1.1 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ019N03LSATMA1 Infineon_BSZ019N03LS_DataSheet_v02_04_EN.pdf
BSZ019N03LSATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 40A TDSON-8 OptiMOS
auf Bestellung 13572 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.38 EUR
10+0.99 EUR
100+0.84 EUR
500+0.81 EUR
5000+0.8 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ019N03LSATMA1 BSZ019N03LS_Rev+2.1.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb7ddf173f4e
BSZ019N03LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A . 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta). 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 14145 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.78 EUR
10+2.41 EUR
100+1.63 EUR
500+1.3 EUR
1000+1.19 EUR
2000+1.1 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH