| Anzahl | Preis |
|---|---|
| 2+ | 2.15 EUR |
| 10+ | 1.69 EUR |
| 100+ | 1.17 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSZ025N04LSATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 22A/40A TSDSON, Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TSDSON-8-FL, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 69W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSZ025N04LSATMA1 nach Preis ab 1 EUR bis 2.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BSZ025N04LSATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 40V 22A/40A TSDSONRds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TSDSON-8-FL Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 69W (Tc) |
auf Bestellung 1950 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSZ025N04LSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 22A/40A TSDSON
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Description: MOSFET N-CH 40V 22A/40A TSDSON
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.57 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1 EUR |