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BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 Infineon Technologies

BSZ036NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed92706043869
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 16A/40A TSDSON
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.5 EUR
10000+0.49 EUR
Mindestbestellmenge: 5000 Stücke
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Technische Details BSZ036NE2LSATMA1 Infineon Technologies

Description: MOSFET N-CH 25V 16A/40A TSDSON, Supplier Device Package: PG-TSDSON-8-FL, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 37W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active.

Weitere Produktangebote BSZ036NE2LSATMA1 nach Preis ab 0.57 EUR bis 1.95 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSZ036NE2LSATMA1 BSZ036NE2LSATMA1 Infineon Technologies Infineon_BSZ036NE2LS_DataSheet_v02_04_EN-3361112.pdf MOSFETs N-Ch 25V 40A TDSON-8 OptiMOS
auf Bestellung 12437 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.85 EUR
10+0.83 EUR
100+0.68 EUR
500+0.6 EUR
1000+0.58 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ036NE2LSATMA1 BSZ036NE2LSATMA1 Infineon Technologies BSZ036NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed92706043869 Description: MOSFET N-CH 25V 16A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 14557 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
17+1.06 EUR
100+0.76 EUR
500+0.69 EUR
1000+0.61 EUR
2000+0.57 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ036NE2LSATMA1 Infineon_BSZ036NE2LS_DataSheet_v02_04_EN-3361112.pdf
BSZ036NE2LSATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 25V 40A TDSON-8 OptiMOS
auf Bestellung 12437 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.85 EUR
10+0.83 EUR
100+0.68 EUR
500+0.6 EUR
1000+0.58 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ036NE2LSATMA1 BSZ036NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed92706043869
BSZ036NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 16A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-FL
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 14557 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.95 EUR
17+1.06 EUR
100+0.76 EUR
500+0.69 EUR
1000+0.61 EUR
2000+0.57 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH