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BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 Infineon Technologies

BSZ036NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed92706043869 Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 16A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.58 EUR
10000+ 0.56 EUR
25000+ 0.55 EUR
Mindestbestellmenge: 5000
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Technische Details BSZ036NE2LSATMA1 Infineon Technologies

Description: MOSFET N-CH 25V 16A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 37W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V.

Weitere Produktangebote BSZ036NE2LSATMA1 nach Preis ab 0.58 EUR bis 1.48 EUR

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BSZ036NE2LSATMA1 BSZ036NE2LSATMA1 Hersteller : Infineon Technologies Infineon_BSZ036NE2LS_DataSheet_v02_04_EN-3361112.pdf MOSFET N-Ch 25V 40A TDSON-8 OptiMOS
auf Bestellung 13353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+0.97 EUR
10+ 0.83 EUR
100+ 0.7 EUR
500+ 0.63 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 3
BSZ036NE2LSATMA1 BSZ036NE2LSATMA1 Hersteller : Infineon Technologies BSZ036NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed92706043869 Description: MOSFET N-CH 25V 16A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
auf Bestellung 63827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.48 EUR
15+ 1.21 EUR
100+ 0.94 EUR
500+ 0.8 EUR
1000+ 0.65 EUR
2000+ 0.61 EUR
Mindestbestellmenge: 12
BSZ036NE2LSATMA1 BSZ036NE2LSATMA1 Hersteller : Infineon Technologies infineon-bsz036ne2ls-datasheet-v02_03-en.pdf Trans MOSFET N-CH 25V 16A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ036NE2LSATMA1 Hersteller : INFINEON TECHNOLOGIES BSZ036NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed92706043869 BSZ036NE2LSATMA1 SMD N channel transistors
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