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BSZ037N06LS5ATMA1

BSZ037N06LS5ATMA1 Infineon Technologies

Infineon-BSZ037N06LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53b0879f52ec Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
auf Bestellung 9960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.58 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSZ037N06LS5ATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 18A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 36µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V.

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BSZ037N06LS5ATMA1 BSZ037N06LS5ATMA1 Hersteller : Infineon Technologies Infineon_BSZ037N06LS5_DataSheet_v02_01_EN-3360834.pdf MOSFETs TRENCH 40<-<100V
auf Bestellung 3210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.92 EUR
10+2.08 EUR
100+1.81 EUR
250+1.63 EUR
500+1.53 EUR
1000+1.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSZ037N06LS5ATMA1 BSZ037N06LS5ATMA1 Hersteller : Infineon Technologies Infineon-BSZ037N06LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53b0879f52ec Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
auf Bestellung 9960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+2.9 EUR
25+2.59 EUR
100+2.33 EUR
250+2.07 EUR
500+1.81 EUR
1000+1.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BSZ037N06LS5ATMA1 BSZ037N06LS5ATMA1 Hersteller : Infineon Technologies infineon-bsz037n06ls5-datasheet-v02_01-en.pdf Trans MOSFET N-CH 60V 18A T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH