Produkte > INFINEON TECHNOLOGIES > BSZ0500NSIATMA1
BSZ0500NSIATMA1

BSZ0500NSIATMA1 Infineon Technologies

Infineon-BSZ0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd7c2c2163ad Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.55 EUR
Mindestbestellmenge: 5000
Produktrezensionen
Produktbewertung abgeben

Technische Details BSZ0500NSIATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 30A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V.

Weitere Produktangebote BSZ0500NSIATMA1 nach Preis ab 1.61 EUR bis 3.85 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSZ0500NSIATMA1 BSZ0500NSIATMA1 Hersteller : Infineon Technologies Infineon-BSZ0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd7c2c2163ad Description: MOSFET N-CH 30V 30A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.57 EUR
10+ 2.97 EUR
100+ 2.36 EUR
500+ 2 EUR
1000+ 1.7 EUR
2000+ 1.61 EUR
Mindestbestellmenge: 5
BSZ0500NSIATMA1 BSZ0500NSIATMA1 Hersteller : Infineon Technologies Infineon_BSZ0500NSI_DataSheet_v02_02_EN-3361008.pdf MOSFET TRENCH <= 40V
auf Bestellung 5000 Stücke:
Lieferzeit 299-303 Tag (e)
Anzahl Preis ohne MwSt
1+3.85 EUR
10+ 3.4 EUR
100+ 2.85 EUR
250+ 2.76 EUR
500+ 2.39 EUR
1000+ 1.97 EUR
2500+ 1.87 EUR