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BSZ0589NSATMA1

BSZ0589NSATMA1 Infineon Technologies

Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0 Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 5555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+1.97 EUR
10+ 1.77 EUR
100+ 1.38 EUR
500+ 1.14 EUR
1000+ 0.9 EUR
2000+ 0.84 EUR
Mindestbestellmenge: 9
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Technische Details BSZ0589NSATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 17A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V.

Weitere Produktangebote BSZ0589NSATMA1 nach Preis ab 0.69 EUR bis 1.78 EUR

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Preis ohne MwSt
BSZ0589NSATMA1 Hersteller : Infineon Technologies Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0 MOSFET TRENCH <= 40V
auf Bestellung 6958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.78 EUR
10+ 1.58 EUR
100+ 1.24 EUR
500+ 1.02 EUR
1000+ 0.81 EUR
5000+ 0.75 EUR
10000+ 0.69 EUR
Mindestbestellmenge: 2
BSZ0589NSATMA1 BSZ0589NSATMA1 Hersteller : Infineon Technologies Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0 Description: MOSFET N-CH 30V 17A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
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