BSZ058N03LSGATMA1 Infineon Technologies
auf Bestellung 2532 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.60 EUR |
| 5000+ | 0.54 EUR |
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Technische Details BSZ058N03LSGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 15A/40A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TSDSON-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V.
Weitere Produktangebote BSZ058N03LSGATMA1
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BSZ058N03LSGATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSZ058N03LSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
BSZ058N03LSGATMA1 SMD N channel transistors |
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BSZ058N03LSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 15A/40A 8TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TSDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V |
Produkt ist nicht verfügbar |
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BSZ058N03LSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 15A/40A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TSDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V |
Produkt ist nicht verfügbar |