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BSZ065N06LS5ATMA1

BSZ065N06LS5ATMA1 Infineon Technologies

Infineon_BSZ065N06LS5_DataSheet_v02_04_EN-3360995.pdf Hersteller: Infineon Technologies
MOSFET MV POWER MOS
auf Bestellung 121165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.9 EUR
10+ 1.58 EUR
100+ 1.32 EUR
500+ 1.16 EUR
1000+ 0.94 EUR
5000+ 0.89 EUR
10000+ 0.86 EUR
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Technische Details BSZ065N06LS5ATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 20µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V.

Weitere Produktangebote BSZ065N06LS5ATMA1 nach Preis ab 1.83 EUR bis 2.22 EUR

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BSZ065N06LS5ATMA1 BSZ065N06LS5ATMA1 Hersteller : Infineon Technologies Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817 Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.22 EUR
10+ 1.83 EUR
Mindestbestellmenge: 8
BSZ065N06LS5ATMA1 BSZ065N06LS5ATMA1 Hersteller : Infineon Technologies 51infineon-bsz065n06ls5-ds-v02_02-en.pdffileid5546d4625696ed760156e.pdf Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ065N06LS5ATMA1 BSZ065N06LS5ATMA1 Hersteller : Infineon Technologies Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817 Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
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