Technische Details BSZ086P03NS3EGATMA1 Infineon Technologies
Description: MOSFET P-CH 30V 13.5A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 3.1V @ 105µA, Supplier Device Package: PG-TSDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 57.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V.
Weitere Produktangebote BSZ086P03NS3EGATMA1 nach Preis ab 0.38 EUR bis 2.02 EUR
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BSZ086P03NS3EGATMA1 | Infineon Technologies |
 Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP T/R |
auf Bestellung 9410 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ086P03NS3EGATMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 13.5A/40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 105µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V |
auf Bestellung 4688 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSZ086P03NS3EGATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP T/R
Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP T/R
auf Bestellung 9410 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 108+ | 1.36 EUR |
| 157+ | 0.92 EUR |
| 159+ | 0.89 EUR |
| 164+ | 0.84 EUR |
| 218+ | 0.63 EUR |
| 350+ | 0.38 EUR |
| BSZ086P03NS3EGATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 13.5A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
Description: MOSFET P-CH 30V 13.5A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
auf Bestellung 4688 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.02 EUR |
| 14+ | 1.27 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.59 EUR |
| 2000+ | 0.54 EUR |