auf Bestellung 5260 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.54 EUR |
| 100+ | 1.22 EUR |
| 500+ | 1.14 EUR |
| 5000+ | 0.97 EUR |
| 10000+ | 0.74 EUR |
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Technische Details BSZ0905PNSATMA1 Infineon Technologies
Description: MOSFET P-CH 30V 40A TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V, Power Dissipation (Max): 69W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 105µA, Supplier Device Package: PG-TDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V.
Weitere Produktangebote BSZ0905PNSATMA1
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BSZ0905PNSATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET P-CH 30V 40A TDSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Power Dissipation (Max): 69W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 105µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V |
Produkt ist nicht verfügbar |
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BSZ0905PNSATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 40A TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Power Dissipation (Max): 69W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 105µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V |
Produkt ist nicht verfügbar |