| Anzahl | Preis |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.54 EUR |
| 100+ | 1.22 EUR |
| 500+ | 1.14 EUR |
| 5000+ | 0.97 EUR |
| 10000+ | 0.74 EUR |
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Technische Details BSZ0905PNSATMA1 Infineon Technologies
Description: MOSFET P-CH 30V 40A TDSON-8, Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8, Vgs(th) (Max) @ Id: 1.9V @ 105µA, Power Dissipation (Max): 69W (Ta), Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSZ0905PNSATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSZ0905PNSATMA1 | Infineon Technologies |
 Description: MOSFET P-CH 30V 40A TDSON-8Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 1.9V @ 105µA Power Dissipation (Max): 69W (Ta) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BSZ0905PNSATMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 40A TDSON-8 Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 1.9V @ 105µA Power Dissipation (Max): 69W (Ta) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSZ0905PNSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 40A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 1.9V @ 105µA
Power Dissipation (Max): 69W (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 40A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 1.9V @ 105µA
Power Dissipation (Max): 69W (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ0905PNSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 40A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 1.9V @ 105µA
Power Dissipation (Max): 69W (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 40A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 1.9V @ 105µA
Power Dissipation (Max): 69W (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH