BSZ096N10LS5ATMA1 Infineon Technologies
auf Bestellung 100000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.20 EUR |
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Technische Details BSZ096N10LS5ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 36µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V.
Weitere Produktangebote BSZ096N10LS5ATMA1 nach Preis ab 1.20 EUR bis 2.96 EUR
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BSZ096N10LS5ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ096N10LS5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 36µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V |
auf Bestellung 5672 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ096N10LS5ATMA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH >=100V |
auf Bestellung 35945 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ096N10LS5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ096N10LS5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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BSZ096N10LS5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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| BSZ096N10LS5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
BSZ096N10LS5ATMA1 SMD N channel transistors |
Produkt ist nicht verfügbar |
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BSZ096N10LS5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 36µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V |
Produkt ist nicht verfügbar |