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BSZ100N06NSATMA1

BSZ100N06NSATMA1 Infineon Technologies

Infineon-BSZ100N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cf112fd7173
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.48 EUR
10000+0.46 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSZ100N06NSATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 14µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V.

Weitere Produktangebote BSZ100N06NSATMA1 nach Preis ab 0.54 EUR bis 2.34 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSZ100N06NSATMA1 BSZ100N06NSATMA1 Infineon Technologies Infineon-BSZ100N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cf112fd7173 Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 11153 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.78 EUR
16+1.14 EUR
100+0.83 EUR
500+0.66 EUR
1000+0.59 EUR
2000+0.56 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06NSATMA1 BSZ100N06NSATMA1 Infineon Technologies Infineon-BSZ100N06NS-DataSheet-v02_02-EN.pdf MOSFETs IFX FET 60V
auf Bestellung 20404 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.34 EUR
10+1.39 EUR
100+0.98 EUR
500+0.81 EUR
1000+0.69 EUR
2500+0.63 EUR
5000+0.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06NSATMA1 Infineon-BSZ100N06NS-DS-v02_00-en.pdf?fileId=db3a304342371bb001424cf112fd7173
BSZ100N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
auf Bestellung 11153 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.78 EUR
16+1.14 EUR
100+0.83 EUR
500+0.66 EUR
1000+0.59 EUR
2000+0.56 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06NSATMA1 Infineon-BSZ100N06NS-DataSheet-v02_02-EN.pdf
BSZ100N06NSATMA1
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
auf Bestellung 20404 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.34 EUR
10+1.39 EUR
100+0.98 EUR
500+0.81 EUR
1000+0.69 EUR
2500+0.63 EUR
5000+0.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH