Technische Details BSZ105N04NS G Infineon Technologies
Description: OPTLMOS POWER-MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TSDSON-8, Vgs(th) (Max) @ Id: 4V @ 14µA, Power Dissipation (Max): 2.1W (Ta), 35W (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.
Weitere Produktangebote BSZ105N04NS G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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BSZ105N04NSG | Infineon Technologies |
 Description: OPTLMOS POWER-MOSFETInput Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TSDSON-8 Vgs(th) (Max) @ Id: 4V @ 14µA Power Dissipation (Max): 2.1W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
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 |
BSZ105N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 29A Power dissipation: 35W Case: PG-TSDSON-8 On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhancement Gate-source voltage: ±20V Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSZ105N04NSG |
|
Hersteller: Infineon Technologies
Description: OPTLMOS POWER-MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 4V @ 14µA
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Description: OPTLMOS POWER-MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 4V @ 14µA
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ105N04NSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH