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BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 Infineon Technologies

Infineon-BSZ110N08NS5-DS-v02_01-en.pdf?fileId=5546d461454603990145ccd70d7261fe
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.61 EUR
10000+0.6 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSZ110N08NS5ATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 22µA, Supplier Device Package: PG-TSDSON-8-FL, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V.

Weitere Produktangebote BSZ110N08NS5ATMA1 nach Preis ab 0.64 EUR bis 2.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 Infineon Technologies Infineon_BSZ110N08NS5_DataSheet_v02_03_EN.pdf MOSFETs N-Ch 80V 40A TSDSON-8
auf Bestellung 11231 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.27 EUR
10+1.33 EUR
100+1.02 EUR
500+0.84 EUR
1000+0.75 EUR
2500+0.74 EUR
5000+0.64 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 Infineon Technologies Infineon-BSZ110N08NS5-DS-v02_01-en.pdf?fileId=5546d461454603990145ccd70d7261fe Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V
auf Bestellung 36441 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.75 EUR
2000+0.74 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ110N08NS5ATMA1 Infineon_BSZ110N08NS5_DataSheet_v02_03_EN.pdf
BSZ110N08NS5ATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 80V 40A TSDSON-8
auf Bestellung 11231 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.27 EUR
10+1.33 EUR
100+1.02 EUR
500+0.84 EUR
1000+0.75 EUR
2500+0.74 EUR
5000+0.64 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ110N08NS5ATMA1 Infineon-BSZ110N08NS5-DS-v02_01-en.pdf?fileId=5546d461454603990145ccd70d7261fe
BSZ110N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 40 V
auf Bestellung 36441 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.75 EUR
2000+0.74 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH