BSZ123N08NS3GATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 10A/40A 8TSDSON
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
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Technische Details BSZ123N08NS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 10A/40A 8TSDSON, Supplier Device Package: PG-TSDSON-8, Vgs(th) (Max) @ Id: 3.5V @ 33µA, Power Dissipation (Max): 2.1W (Ta), 66W (Tc), Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active.
Weitere Produktangebote BSZ123N08NS3GATMA1 nach Preis ab 0.9 EUR bis 2.85 EUR
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BSZ123N08NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 10A/40A 8TSDSON Power Dissipation (Max): 2.1W (Ta), 66W (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) FET Type: N-Channel Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TSDSON-8 Vgs(th) (Max) @ Id: 3.5V @ 33µA Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 36285 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSZ123N08NS3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 10A/40A 8TSDSON
Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 80V 10A/40A 8TSDSON
Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
FET Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 36285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.85 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.23 EUR |
| 500+ | 0.97 EUR |
| 1000+ | 0.9 EUR |