BSZ12DN20NS3 G Infineon Technologies

Description: BSZ12DN20 - 12V-300V N-CHANNEL P, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TSDSON-8, Vgs(th) (Max) @ Id: 4V @ 25µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V.