Technische Details BSZ150N10LS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 33µA, Supplier Device Package: PG-TSDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V.
Weitere Produktangebote BSZ150N10LS3GATMA1 nach Preis ab 0.57 EUR bis 3.89 EUR
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BSZ150N10LS3GATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 100V 8A 8-Pin TSDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ150N10LS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 40A 8TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 33µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ150N10LS3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 8A 8-Pin TSDSON EP T/R |
auf Bestellung 1620 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ150N10LS3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 8A 8-Pin TSDSON EP T/R |
auf Bestellung 1620 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ150N10LS3GATMA1 | Infineon Technologies |
MOSFETs N-Ch 100V 40A TSDSON-8 |
auf Bestellung 12759 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ150N10LS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 40A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 33µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
auf Bestellung 19250 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSZ150N10LS3GATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 8A 8-Pin TSDSON EP T/R
Trans MOSFET N-CH 100V 8A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.85 EUR |
| BSZ150N10LS3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 33µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 100V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 33µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.03 EUR |
| 10000+ | 0.97 EUR |
| 15000+ | 0.94 EUR |
| BSZ150N10LS3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 8A 8-Pin TSDSON EP T/R
Trans MOSFET N-CH 100V 8A 8-Pin TSDSON EP T/R
auf Bestellung 1620 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 133+ | 1.1 EUR |
| 134+ | 1.08 EUR |
| 157+ | 0.9 EUR |
| 250+ | 0.87 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.67 EUR |
| BSZ150N10LS3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 8A 8-Pin TSDSON EP T/R
Trans MOSFET N-CH 100V 8A 8-Pin TSDSON EP T/R
auf Bestellung 1620 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 113+ | 1.3 EUR |
| 133+ | 1.06 EUR |
| 134+ | 1.01 EUR |
| 157+ | 0.83 EUR |
| 250+ | 0.79 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.57 EUR |
| BSZ150N10LS3GATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 40A TSDSON-8
MOSFETs N-Ch 100V 40A TSDSON-8
auf Bestellung 12759 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.78 EUR |
| 10+ | 2.39 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.18 EUR |
| 2500+ | 1.1 EUR |
| 5000+ | 1.05 EUR |
| BSZ150N10LS3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 33µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 100V 40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 33µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 19250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.89 EUR |
| 10+ | 2.49 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.23 EUR |
| 2000+ | 1.14 EUR |