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BSZ160N10NS3GATMA1

BSZ160N10NS3GATMA1 Infineon Technologies

BSZ160N10N3SG_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320896aa20120c3365eef2370
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.84 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSZ160N10NS3GATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 8A/40A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 12µA, Supplier Device Package: PG-TSDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V.

Weitere Produktangebote BSZ160N10NS3GATMA1 nach Preis ab 0.99 EUR bis 3.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSZ160N10NS3GATMA1 BSZ160N10NS3GATMA1 Infineon Technologies BSZ160N10N3SG_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320896aa20120c3365eef2370 Description: MOSFET N-CH 100V 8A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
auf Bestellung 5038 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.15 EUR
10+2.02 EUR
100+1.36 EUR
500+1.09 EUR
1000+1.03 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ160N10NS3GATMA1 BSZ160N10NS3GATMA1 Infineon Technologies Infineon-BSZ160N10NS3 G-DS-v02_01-EN.pdf MOSFETs N-Ch 100V 40A TSDSON-8 OptiMOS 3
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.2 EUR
10+2.01 EUR
100+1.36 EUR
500+1.12 EUR
1000+1.02 EUR
5000+0.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSZ160N10NS3GATMA1 BSZ160N10N3SG_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320896aa20120c3365eef2370
BSZ160N10NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
auf Bestellung 5038 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.15 EUR
10+2.02 EUR
100+1.36 EUR
500+1.09 EUR
1000+1.03 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ160N10NS3GATMA1 Infineon-BSZ160N10NS3 G-DS-v02_01-EN.pdf
BSZ160N10NS3GATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 40A TSDSON-8 OptiMOS 3
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.2 EUR
10+2.01 EUR
100+1.36 EUR
500+1.12 EUR
1000+1.02 EUR
5000+0.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH