BSZ16DN25NS3GATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 250V 10.9A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 1.52 EUR |
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Technische Details BSZ16DN25NS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 250V 10.9A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 32µA, Supplier Device Package: PG-TSDSON-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V.
Weitere Produktangebote BSZ16DN25NS3GATMA1 nach Preis ab 1.52 EUR bis 3.5 EUR
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BSZ16DN25NS3GATMA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 |
auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ16DN25NS3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 250V 10.9A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 32µA Supplier Device Package: PG-TSDSON-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V |
auf Bestellung 6078 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ16DN25NS3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ16DN25NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TSDSON-8 Drain-source voltage: 250V Drain current: 10.9A On-state resistance: 0.165Ω Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSZ16DN25NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TSDSON-8 Drain-source voltage: 250V Drain current: 10.9A On-state resistance: 0.165Ω Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar |
Produkt ist nicht verfügbar |