BSZ180P03NS3GATMA1 (BSZ180P03NS3 G)
Produktcode: 191392
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Weitere Produktangebote BSZ180P03NS3GATMA1 (BSZ180P03NS3 G) nach Preis ab 0.43 EUR bis 1.94 EUR
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BSZ180P03NS3GATMA1 | Infineon Technologies |
 Description: MOSFET P-CH 30V 9A/39.6A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 48µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V |
auf Bestellung 7639 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ180P03NS3GATMA1 | Infineon Technologies |
MOSFETs P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 |
auf Bestellung 1318 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSZ180P03NS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
auf Bestellung 7639 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 18+ | 0.99 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.47 EUR |
| 2000+ | 0.45 EUR |
| BSZ180P03NS3GATMA1 |
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Hersteller: Infineon Technologies
MOSFETs P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
MOSFETs P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
auf Bestellung 1318 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.94 EUR |
| 10+ | 1.21 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.55 EUR |
| 2500+ | 0.48 EUR |
| 5000+ | 0.43 EUR |