BSZ180P03NS3GATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.46 EUR |
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Technische Details BSZ180P03NS3GATMA1 Infineon Technologies
Description: MOSFET P-CH 30V 9A/39.6A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 3.1V @ 48µA, Supplier Device Package: PG-TSDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V.
Weitere Produktangebote BSZ180P03NS3GATMA1 nach Preis ab 0.45 EUR bis 1.29 EUR
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BSZ180P03NS3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 9A/39.6A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 48µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V |
auf Bestellung 14176 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ180P03NS3GATMA1 | Hersteller : Infineon Technologies |
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 |
auf Bestellung 7753 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ180P03NS3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 30V 9A 8-Pin TSDSON EP T/R |
auf Bestellung 4999 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ180P03NS3GATMA1 (BSZ180P03NS3 G) Produktcode: 191392 |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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BSZ180P03NS3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 30V 9A 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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BSZ180P03NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -39.6A Power dissipation: 40W Case: PG-TSDSON-8 Gate-source voltage: ±25V On-state resistance: 40mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSZ180P03NS3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 30V 9A 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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BSZ180P03NS3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 30V 9A 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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BSZ180P03NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -39.6A Power dissipation: 40W Case: PG-TSDSON-8 Gate-source voltage: ±25V On-state resistance: 40mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |