BSZ215CHXTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N/P-CH 20V 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.94 EUR |
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Technische Details BSZ215CHXTMA1 Infineon Technologies
Description: MOSFET N/P-CH 20V 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A, Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V, Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 1.4V @ 110µA, Supplier Device Package: PG-TSDSON-8, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BSZ215CHXTMA1 nach Preis ab 0.95 EUR bis 2.41 EUR
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BSZ215CHXTMA1 | Hersteller : Infineon Technologies |
MOSFET SMALL SIGNAL+P-CH |
auf Bestellung 2946 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ215CHXTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 20V 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.4V @ 110µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6605 Stücke: Lieferzeit 10-14 Tag (e) |
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