BSZ240N12NS3GATMA1 Infineon Technologies
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details BSZ240N12NS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 120V 37A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 4V @ 35µA, Supplier Device Package: PG-TSDSON-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 60 V.
Weitere Produktangebote BSZ240N12NS3GATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
BSZ240N12NS3GATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 120V 37A 8TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TSDSON-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 60 V |
Produkt ist nicht verfügbar |
|
|
|
BSZ240N12NS3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 120V 37A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TSDSON-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 60 V |
Produkt ist nicht verfügbar |
|
 |
BSZ240N12NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 37A Power dissipation: 66W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |