Produkte > INFINEON TECHNOLOGIES > BSZ340N08NS3GATMA1

BSZ340N08NS3GATMA1 Infineon Technologies


Infineon-BSZ340N08NS3G-DS-v02_03-en.pdf?fileId=db3a30431ff9881501206626660b6c72
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 6A/23A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.45 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BSZ340N08NS3GATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 6A/23A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V, Power Dissipation (Max): 2.1W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 12µA, Supplier Device Package: PG-TSDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 40 V.

Weitere Produktangebote BSZ340N08NS3GATMA1 nach Preis ab 0.4 EUR bis 1.9 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSZ340N08NS3GATMA1 BSZ340N08NS3GATMA1 Infineon Technologies Infineon_BSZ340N08NS3G_DS_v02_03_en.pdf MOSFETs N-Ch 80V 23A TSDSON-8 OptiMOS 3
auf Bestellung 6490 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.74 EUR
10+0.62 EUR
100+0.52 EUR
500+0.49 EUR
1000+0.47 EUR
5000+0.4 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ340N08NS3GATMA1 BSZ340N08NS3GATMA1 Infineon Technologies Infineon-BSZ340N08NS3G-DS-v02_03-en.pdf?fileId=db3a30431ff9881501206626660b6c72 Description: MOSFET N-CH 80V 6A/23A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 40 V
auf Bestellung 7461 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.9 EUR
15+1.19 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
2000+0.5 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ340N08NS3GATMA1 Infineon_BSZ340N08NS3G_DS_v02_03_en.pdf
Hersteller: Infineon Technologies
MOSFETs N-Ch 80V 23A TSDSON-8 OptiMOS 3
auf Bestellung 6490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.74 EUR
10+0.62 EUR
100+0.52 EUR
500+0.49 EUR
1000+0.47 EUR
5000+0.4 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ340N08NS3GATMA1 Infineon-BSZ340N08NS3G-DS-v02_03-en.pdf?fileId=db3a30431ff9881501206626660b6c72
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 6A/23A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 40 V
auf Bestellung 7461 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.9 EUR
15+1.19 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
2000+0.5 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH