Produkte > INFINEON TECHNOLOGIES > BSZ440N10NS3GATMA1

BSZ440N10NS3GATMA1 INFINEON TECHNOLOGIES


BSZ440N10NS3G-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 5867 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
67+1.07 EUR
92+0.78 EUR
109+0.66 EUR
112+0.64 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BSZ440N10NS3GATMA1 INFINEON TECHNOLOGIES

Description: MOSFET N-CH 100V 5.3A/18A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V, Power Dissipation (Max): 29W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 12µA, Supplier Device Package: PG-TSDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V.

Weitere Produktangebote BSZ440N10NS3GATMA1 nach Preis ab 0.4 EUR bis 1.88 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 Infineon Technologies Infineon-BSZ440N10NS3 G-DS-v02_01-EN.pdf MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
auf Bestellung 49586 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.68 EUR
10+1.12 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.47 EUR
5000+0.41 EUR
10000+0.4 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 Infineon Technologies BSZ440N10NS3+Rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320896aa20120c32dbf312354 Description: MOSFET N-CH 100V 5.3A/18A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
auf Bestellung 6182 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.6 EUR
1000+0.55 EUR
2000+0.5 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3GATMA1 Infineon-BSZ440N10NS3 G-DS-v02_01-EN.pdf
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
auf Bestellung 49586 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.68 EUR
10+1.12 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.47 EUR
5000+0.41 EUR
10000+0.4 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3GATMA1 BSZ440N10NS3+Rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320896aa20120c32dbf312354
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 5.3A/18A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
auf Bestellung 6182 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.6 EUR
1000+0.55 EUR
2000+0.5 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH