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BSZ900N15NS3GATMA1

BSZ900N15NS3GATMA1 Infineon Technologies

BSZ900N15NS3+Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a304326623792012669f7decc224c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 13A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.9 EUR
10000+0.84 EUR
15000+0.81 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSZ900N15NS3GATMA1 Infineon Technologies

Description: MOSFET N-CH 150V 13A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: PG-TSDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V.

Weitere Produktangebote BSZ900N15NS3GATMA1 nach Preis ab 0.81 EUR bis 3.47 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSZ900N15NS3GATMA1 BSZ900N15NS3GATMA1 Infineon Technologies Infineon_BSZ900N15NS3_DS_v02_01_en-1226588.pdf MOSFETs N-Ch 150V 13A TSDSON-8 OptiMOS 3
auf Bestellung 16356 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.01 EUR
10+1.39 EUR
100+1.08 EUR
500+0.92 EUR
1000+0.84 EUR
5000+0.82 EUR
25000+0.81 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ900N15NS3GATMA1 BSZ900N15NS3GATMA1 Infineon Technologies BSZ900N15NS3+Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a304326623792012669f7decc224c Description: MOSFET N-CH 150V 13A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
auf Bestellung 23706 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.47 EUR
10+2.21 EUR
100+1.48 EUR
500+1.17 EUR
1000+1.07 EUR
2000+0.99 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ900N15NS3GATMA1 Infineon_BSZ900N15NS3_DS_v02_01_en-1226588.pdf
BSZ900N15NS3GATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 150V 13A TSDSON-8 OptiMOS 3
auf Bestellung 16356 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.01 EUR
10+1.39 EUR
100+1.08 EUR
500+0.92 EUR
1000+0.84 EUR
5000+0.82 EUR
25000+0.81 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSZ900N15NS3GATMA1 BSZ900N15NS3+Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a304326623792012669f7decc224c
BSZ900N15NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 13A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
auf Bestellung 23706 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.47 EUR
10+2.21 EUR
100+1.48 EUR
500+1.17 EUR
1000+1.07 EUR
2000+0.99 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH