BTS110NKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details BTS110NKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 10A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.