BTS115ANKSA1 Infineon Technologies
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 71+ | 7.69 EUR |
| 100+ | 7.05 EUR |
| 500+ | 6.42 EUR |
| 1000+ | 5.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BTS115ANKSA1 Infineon Technologies
Description: MOSFET N-CH 50V 15.5A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V.
Weitere Produktangebote BTS115ANKSA1 nach Preis ab 5.28 EUR bis 8.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BTS115ANKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 50V 15.5A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 11000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
BTS115ANKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 50V 15.5A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| BTS115ANKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BTS115ANKSA1 - BTS115 POWER FIELD-EFFECT TRANSISTOR, 1 tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||
 |
BTS115ANKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 50V 15.5A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
BTS115ANKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 50V 15.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V |
Produkt ist nicht verfügbar |