BTS131E3045ANTMA1 Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 75W, Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk.