BTS131E3045ANTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 8919 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 41+ | 12.60 EUR |
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Technische Details BTS131E3045ANTMA1 Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V, Power Dissipation (Max): 75W, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.
Weitere Produktangebote BTS131E3045ANTMA1
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BTS131E3045ANTMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BTS131E3045ANTMA1 - BTS131 POWER FIELD-EFFECT TRANSISTOR, N tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 8919 Stücke: Lieferzeit 14-21 Tag (e) |
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| BTS131E3045ANTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 50V 25A 3-Pin(2+Tab) TO-220AB SMD T/R |
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