BTS244ZE3062AATMA1 Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO263-5-2, Vgs(th) (Max) @ Id: 2V @ 130µA, Power Dissipation (Max): 170W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB, Packaging: Bulk, Qualification: AEC-Q100, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V.