BTS244ZE3062AATMA2 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 55V 35A TO263-5
Packaging: Bulk
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 104+ | 4.49 EUR |
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Technische Details BTS244ZE3062AATMA2 Infineon Technologies
Description: MOSFET N-CH 55V 35A TO263-5, Packaging: Tape & Reel (TR), Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V, FET Feature: Temperature Sensing Diode, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 2V @ 130µA, Supplier Device Package: PG-TO263-5-2, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BTS244ZE3062AATMA2 nach Preis ab 5.16 EUR bis 9.91 EUR
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BTS244ZE3062AATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 35A Automotive 5-Pin(4+Tab) TO-263 T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS244ZE3062AATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 35A Automotive 5-Pin(4+Tab) TO-263 T/R |
auf Bestellung 666 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS244ZE3062AATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 35A TO263-5 Packaging: Cut Tape (CT) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO263-5-2 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS244ZE3062AATMA2 | Hersteller : INFINEON |
Description: INFINEON - BTS244ZE3062AATMA2 - Leistungs-MOSFET, n-Kanal, 55 V, 35 A, 0.0115 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.65V euEccn: NLR Verlustleistung: 170W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 5Pin(s) Produktpalette: Speed TEMPFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0115ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 173 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS244ZE3062AATMA2 | Hersteller : INFINEON |
Description: INFINEON - BTS244ZE3062AATMA2 - Leistungs-MOSFET, n-Kanal, 55 V, 35 A, 0.0115 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.65V euEccn: NLR Verlustleistung: 170W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 5Pin(s) Produktpalette: Speed TEMPFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0115ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 173 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS244ZE3062AATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 35A Automotive 5-Pin(4+Tab) TO-263 T/R |
Produkt ist nicht verfügbar |
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BTS244ZE3062AATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 35A Automotive 5-Pin(4+Tab) TO-263 T/R |
Produkt ist nicht verfügbar |
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BTS244ZE3062AATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 35A Automotive 5-Pin(4+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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BTS244ZE3062AATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 35A TO263-5 Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO263-5-2 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BTS244ZE3062AATMA2 | Hersteller : Infineon Technologies |
MOSFET N-Ch 55V 19A D2PAK-4 |
Produkt ist nicht verfügbar |