BTS282ZDELCO Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V, Drain to Source Voltage (Vdss): 49 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: P-TO220-7-3, Vgs(th) (Max) @ Id: 2V @ 240µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-7 Formed Leads, Packaging: Bulk.