BTS282ZE3230AKSA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 49V 80A TO220-7
Packaging: Bulk
Package / Case: TO-220-7
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-12
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Description: MOSFET N-CH 49V 80A TO220-7
Packaging: Bulk
Package / Case: TO-220-7
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-12
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
auf Bestellung 395 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
73+ | 9.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BTS282ZE3230AKSA2 Infineon Technologies
Description: INFINEON - BTS282ZE3230AKSA2 - Leistungs-MOSFET, n-Kanal, 49 V, 52 A, 0.0058 ohm, TO-220, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 49V, rohsCompliant: YES, Dauer-Drainstrom Id: 52A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.6V, euEccn: NLR, Verlustleistung: 300W, Bauform - Transistor: TO-220, Anzahl der Pins: 7Pin(s), Produktpalette: TEMPFET, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0058ohm, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote BTS282ZE3230AKSA2 nach Preis ab 9.05 EUR bis 16.93 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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BTS282ZE3230AKSA2 | Hersteller : Infineon Technologies | MOSFET HITFET |
auf Bestellung 860 Stücke: Lieferzeit 14-28 Tag (e) |
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BTS282ZE3230AKSA2 | Hersteller : INFINEON |
Description: INFINEON - BTS282ZE3230AKSA2 - Leistungs-MOSFET, n-Kanal, 49 V, 52 A, 0.0058 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 49V rohsCompliant: YES Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-220 Anzahl der Pins: 7Pin(s) Produktpalette: TEMPFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0058ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 466 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS282ZE3230AKSA2 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 49V 80A Automotive 7-Pin(7+Tab) TO-220 Tube |
auf Bestellung 8530 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS282ZE3230AKSA2 Produktcode: 163635 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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BTS282ZE3230AKSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 36A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-12 On-state resistance: 6.5mΩ Kind of package: tube Technology: TEMPFET® Operating temperature: -40...175°C Output voltage: 49V Power dissipation: 300W Integrated circuit features: internal temperature sensor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BTS282ZE3230AKSA2 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 49V 80A Automotive AEC-Q101 7-Pin(7+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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BTS282ZE3230AKSA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 49V 80A TO220-7 Packaging: Tube Package / Case: TO-220-7 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 240µA Supplier Device Package: PG-TO220-7-12 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 49 V Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
Produkt ist nicht verfügbar |
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BTS282ZE3230AKSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 36A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-12 On-state resistance: 6.5mΩ Kind of package: tube Technology: TEMPFET® Operating temperature: -40...175°C Output voltage: 49V Power dissipation: 300W Integrated circuit features: internal temperature sensor |
Produkt ist nicht verfügbar |