
BTS282ZE3230AKSA2 Infineon Technologies

Description: MOSFET N-CH 49V 80A TO220-7
Packaging: Bulk
Package / Case: TO-220-7
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
77+ | 6.10 EUR |
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Technische Details BTS282ZE3230AKSA2 Infineon Technologies
Description: MOSFET N-CH 49V 80A TO220-7, Packaging: Tube, Package / Case: TO-220-7, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V, FET Feature: Temperature Sensing Diode, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 240µA, Supplier Device Package: PG-TO220-7-12, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 49 V, Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BTS282ZE3230AKSA2 nach Preis ab 6.07 EUR bis 9.02 EUR
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BTS282ZE3230AKSA2 | Hersteller : Infineon Technologies |
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auf Bestellung 494 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS282ZE3230AKSA2 | Hersteller : Infineon Technologies |
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auf Bestellung 494 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS282ZE3230AKSA2 | Hersteller : Infineon Technologies |
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auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS282ZE3230AKSA2 | Hersteller : Infineon Technologies |
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auf Bestellung 517 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS282ZE3230AKSA2 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 36A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-12 On-state resistance: 6.5mΩ Kind of package: tube Technology: TEMPFET® Operating temperature: -40...175°C Output voltage: 49V Power dissipation: 300W Integrated circuit features: internal temperature sensor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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BTS282ZE3230AKSA2 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 36A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-12 On-state resistance: 6.5mΩ Kind of package: tube Technology: TEMPFET® Operating temperature: -40...175°C Output voltage: 49V Power dissipation: 300W Integrated circuit features: internal temperature sensor |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS282ZE3230AKSA2 | Hersteller : Infineon Technologies |
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auf Bestellung 530 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS282ZE3230AKSA2 | Hersteller : ROCHESTER ELECTRONICS |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS282ZE3230AKSA2 Produktcode: 163635
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BTS282ZE3230AKSA2 | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-7 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 240µA Supplier Device Package: PG-TO220-7-12 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 49 V Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |