BUJ403A/DG,127 WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: TRANS NPN 550V 6A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 550 V
Power - Max: 100 W
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Technische Details BUJ403A/DG,127 WeEn Semiconductors
Description: TRANS NPN 550V 6A TO-220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 550 V, Power - Max: 100 W.
Weitere Produktangebote BUJ403A/DG,127
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUJ403A/DG,127 | Hersteller : WeEn Semiconductors |
Bipolar Transistors - BJT NPN POWER TRANSISTOR |
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