BUK4D16-20X Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL MOSFET FOR AUTOMOTI
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Grade: Automotive
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 8V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Technische Details BUK4D16-20X Nexperia USA Inc.
Description: SMALL SIGNAL MOSFET FOR AUTOMOTI, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Grade: Automotive, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 2W (Ta), 19W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 8V, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote BUK4D16-20X
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK4D16-20X | Hersteller : Nexperia |
MOSFETs SOT1220 N-CH 20V 26A |
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