| Anzahl | Preis |
|---|---|
| 1+ | 3.34 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.43 EUR |
| 500+ | 2.06 EUR |
| 800+ | 1.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK6607-55C,118 Nexperia
Description: MOSFET N-CH 55V 100A D2PAK, Power Dissipation (Max): 158W (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.8V @ 1mA.
Weitere Produktangebote BUK6607-55C,118
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| BUK6607-55C,118 | NXP |
 MOSFET N-CH 55V 100A D2PAK Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
BUK6607-55C,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 100A D2PAK Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BUK6607-55C,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 100A D2PAK Grade: Automotive Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUK6607-55C,118 |
|
Hersteller: NXP
MOSFET N-CH 55V 100A D2PAK Транзистори
MOSFET N-CH 55V 100A D2PAK Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK6607-55C,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 100A D2PAK
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Description: MOSFET N-CH 55V 100A D2PAK
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUK6607-55C,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 100A D2PAK
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 100A D2PAK
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH