BUK6610-75C,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BUK6610 - N-CHANNEL TRE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 560+ | 0.83 EUR |
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Technische Details BUK6610-75C,118 Nexperia USA Inc.
Description: NEXPERIA BUK6610 - N-CHANNEL TRE, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 158W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 78A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk.
Weitere Produktangebote BUK6610-75C,118 nach Preis ab 0.83 EUR bis 0.83 EUR
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BUK6610-75C,118 | Hersteller : Nexperia USA Inc. |
Description: NEXPERIA BUK6610 - N-CHANNEL TRE Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 7200 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6610-75C,118 | Hersteller : Nexperia |
MOSFET N-CHAN 75V 78A |
auf Bestellung 4596 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6610-75C,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 78A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BUK6610-75C,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 78A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |