BUK6C3R3-75C,118 NXP Semiconductors
Hersteller: NXP Semiconductors
Description: NEXPERIA BUK6C3R3 - N-CHANNEL TR
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
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Technische Details BUK6C3R3-75C,118 NXP Semiconductors
Description: NEXPERIA BUK6C3R3 - N-CHANNEL TR, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±16V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Packaging: Bulk, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 181A (Tc).
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BUK6C3R3-75C,118 | Nexperia |
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auf Bestellung 4545 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Nexperia
MOSFET N-chan TrenchMOS FET
MOSFET N-chan TrenchMOS FET
auf Bestellung 4545 Stücke:
Lieferzeit 10-14 Tag (e)