BUK6E3R2-55C,127 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 120A I2PAK
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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Technische Details BUK6E3R2-55C,127 Nexperia USA Inc.
Description: MOSFET N-CH 55V 120A I2PAK, Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 306W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.