BUK7511-55B,127 NXP USA Inc.
Hersteller: NXP USA Inc.Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2604 pF @ 25 V
auf Bestellung 2208 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 701+ | 0.72 EUR |
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Technische Details BUK7511-55B,127 NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V, Power Dissipation (Max): 157W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2604 pF @ 25 V.
Weitere Produktangebote BUK7511-55B,127 nach Preis ab 0.73 EUR bis 0.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| BUK7511-55B,127 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 55V 84A Automotive 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 2208 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7511-55B,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 55V 84A Automotive 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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BUK7511-55B,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2604 pF @ 25 V |
Produkt ist nicht verfügbar |