BUK751R6-30E,127 NXP Semiconductors
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 30V 120A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Rail
Trans MOSFET N-CH 30V 120A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 194+ | 2.77 EUR |
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Technische Details BUK751R6-30E,127 NXP Semiconductors
Description: MOSFET N-CH 30V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V, Power Dissipation (Max): 349W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11.96 pF @ 25 V.
Weitere Produktangebote BUK751R6-30E,127 nach Preis ab 4.44 EUR bis 4.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| BUK751R6-30E,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 349W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11.96 pF @ 25 V |
auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
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