BUK763R8-80E,118 Nexperia
| Anzahl | Preis |
|---|---|
| 91+ | 5.98 EUR |
| 100+ | 5.59 EUR |
| 500+ | 5.19 EUR |
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Technische Details BUK763R8-80E,118 Nexperia
Description: MOSFET N-CH 80V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12030 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK763R8-80E,118 nach Preis ab 2.82 EUR bis 6.93 EUR
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BUK763R8-80E,118 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 80V 120A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12030 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 699 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK763R8-80E,118 | Hersteller : Nexperia |
MOSFETs BUK763R8-80E/SOT404/D2PAK |
auf Bestellung 805 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK763R8-80E,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12030 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |