BUK763R9-60E,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 252+ | 2.09 EUR |
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Technische Details BUK763R9-60E,118 Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 263W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK763R9-60E,118 nach Preis ab 2.43 EUR bis 5.86 EUR
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BUK763R9-60E,118 | Hersteller : Nexperia |
MOSFETs BUK763R9-60E/SOT404/D2PAK |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK763R9-60E,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BUK763R9-60E,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |