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BUK763R9-60E,118

BUK763R9-60E,118 Nexperia USA Inc.

BUK763R9-60E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
auf Bestellung 1487 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
252+2.09 EUR
Mindestbestellmenge: 252
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Technische Details BUK763R9-60E,118 Nexperia USA Inc.

Description: MOSFET N-CH 60V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V.

Weitere Produktangebote BUK763R9-60E,118 nach Preis ab 2.02 EUR bis 4.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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BUK763R9-60E,118 BUK763R9-60E,118 Hersteller : Nexperia BUK763R9-60E.pdf MOSFETs BUK763R9-60E/SOT404/D2PAK
auf Bestellung 4594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.51 EUR
10+3.75 EUR
100+2.97 EUR
250+2.82 EUR
500+2.52 EUR
800+2.13 EUR
2400+2.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BUK763R9-60E,118 BUK763R9-60E,118 Hersteller : Nexperia USA Inc. BUK763R9-60E.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK763R9-60E,118 BUK763R9-60E,118 Hersteller : Nexperia USA Inc. BUK763R9-60E.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH